| Número de pieza | K3878 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba | |
| Logotipo | ||
1. Datasheet - 900V, N-ch, MOSFET Hay una vista previa y un enlace de descarga de K3878 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Symbol Unit Drain-gate voltage (RGS = 20 kΩ) Drain current Pulse (Note 1) Single pulse avalanche energy Avalanche current Channel temperature VDSS VGSS IDP EAS EAR Tstg 900 9 150 9 150 V V W A °C 1. GATE 3. SOURCE ― SC-65 2−16C1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Characteristic Max Unit Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care. 2 1 2010-05-06 1 page rth − tw 1 0.2 0.1 0.02 SINGLE PULSE 10 μ PDM T Rth (ch-c) = 0.833°C/W 10 m 1 PULSE WIDTH tw (s) 100 10 ID max (CONTINUOUS) 100 μs * 1 Tc = 25°C Tc = 25°C increase in temperature. 1 VDSS max 10000 EAS – Tch 800 400 0 CHANNEL TEMPERATURE (INITIAL) Tch (°C) −15 V IAR VDS WAVEFORM VDD = 90 V, L = 17.6 mH = 2 L ⋅ BVDSS ⎟⎟⎠⎞ Free Datasheet http://www.datasheet4u.com/ 5 Page | ||
2SK3878 Datasheet (PDF) 0.1. 2sk3878.pdf Size:205K toshiba. 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS =. K3878: Field Effect Transistor. 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V.
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Persamaan Transistor K3878
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3878.PDF ] | |
K3878 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | K3878 | Field Effect Transistor 2SK3878TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)2SK3878Switching Regulator Applications• • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm | Toshiba |
K38 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| K389 | 2SK389 | Toshiba Semiconductor | |
| K3816 | 2SK3816 Ordering number : EN8054A2SK3816N-Channel Power MOSFET60V, 40A, 26mΩ, TO-262-3L/TO-263-2Lhttp://onsemi.comFeatures• ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25°CParamete Mac os leopard download dmg.
| ON Semiconductor | |
| K3831 | 2SK3831 Ordering number : ENN80282SK3831N-Channel Silicon MOSFET2SK3831 General-Purpose Switching DeviceApplicationsFeatures• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee.Specifications | Sanyo Semicon Device |
Transistor Fet K3878
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